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Webinar by TI "Advancing the next-generation satellite power architecture"![]() 04/09/2025 Given the rapid adoption of AI processing and the ever increasing bandwidth demands of modern satellites, designers are constantly challenged to reduce SWAP while delivering more power to these higher power payloads. In addition, there is increased interest in leveraging GaN FET-based solutions due to their superior performance metrics of high power density, efficiency, and ability to support higher frequencies, which could lead to smaller and lighter passives. For this reason, Texas Instruments is announcing the new product family of GaN FET gate drivers with devices ranging from 22V to 200V, as well as the latest 300W isolated full bridge reference design using a novel zero-voltage switching topology. Join the webinar to learn about:
Date: April 29, 2025. www.ti.com |
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